vs-vsk.230..pbf series www.vishay.com vishay semiconductors revision: 17-jul-14 1 document number: 93053 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 scr/scr and scr/diode (magn-a-pak power modules), 230 a features ? high voltage ? electrically isolated base plate ? 3500 v rms isolating voltage ? industrial standard package ? simplified mechanical designs, rapid assembly ? high surge capability ? large creepage distances ? ul approved file e78996 ? designed and qualified for industrial level ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description this new vsk series of magn -a-pak modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. the semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. they can be interconnected to form single phase or three phase bridges or as ac-switches when modules are connected in anti-parallel mode. these modules are intended for general purpose applications such as battery chargers, welders, motor drives, ups, etc. electrical specifications product summary i t(av) 230 a type modules - thyr istor, standard package magn-a-pak circuit two scrs doubler circuit magn-a-pak major ratings and characteristics symbol characteristics values units i t(av) 85 c 230 a i t(rms) 510 i tsm 50 hz 7500 60 hz 7850 i 2 t 50 hz 280 ka 2 s 60 hz 260 i 2 t 280 ka 2 s v drm /v rrm 800 to 2000 v t j range -40 to 130 c voltage ratings type number voltage code v rrm /v drm , maximum repetitive peak reverse and off-state blocking voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 130 c maximum ma vs-vsk.230- 08 800 900 50 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100
vs-vsk.230..pbf series www.vishay.com vishay semiconductors revision: 17-jul-14 2 document number: 93053 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 on-state conduction parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 230 a 85 c maximum rms on-state current i t(rms) as ac switch 510 a maximum peak, one-cycle on-state non-repetitive, surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 7500 t = 8.3 ms 7850 t = 10 ms 100 % v rrm reapplied 6300 t = 8.3 ms 6600 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 280 ka 2 s t = 8.3 ms 256 t = 10 ms 100 % v rrm reapplied 198 t = 8.3 ms 181 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 2800 ka 2 s low level value or threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 1.03 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 1.07 low level value on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.77 m high level value on-state slope resistance r t2 (i > x i t(av) ), t j = t j maximum 0.73 maximum on-state voltage drop v tm i tm = x i t(av) , t j = t j maximum, 180 conduction, average power = v t(to) x i t(av) + r f x (i t(rms) ) 2 1.59 v maximum holding current i h anode supply = 12 v, initial i t = 30 a, t j = 25 c 500 ma maximum latching current i l anode supply = 12 v, resistive load = 1 , gate pulse: 10 v, 100 s, t j = 25 c 1000 switching parameter symbol test conditions values units typical delay time t d t j = 25 c, gate current = 1 a di g /dt = 1 a/s v d = 0.67 % v drm 1.0 s typical rise time t r 2.0 typical turn-off time t q i tm = 300 a; di/dt = 15 a/s; t j = t j maximum; v r = 50 v; dv/dt = 20 v/s; gate 0 v, 100 50 to 150 blocking parameter symbol test conditions values units maximum peak reverse and off-state leakage current i rrm, i drm t j = t j maximum 50 ma rms insulation voltage v ins 50 hz, circuit to base , all terminals shorted, 25 c, 1 s 3000 v critical rate of rise of off-state voltage dv/dt t j = t j maximum, exponential to 67 % rated v drm 1000 v/s triggering parameter symbol test conditions values units maximum peak gate power p gm t p 5 ms, t j = t j maximum 10.0 w maximum average gate power p g(av) f = 50 hz, t j = t j maximum 2.0 maximum peak gate current + i gm t p 5 ms, t j = t j maximum 3.0 a maximum peak negative gate voltage - v gt t p 5 ms, t j = t j maximum 5.0 v maximum required dc ga te voltage to trigger v gt t j = - 40 c anode supply = 12 v, resistive load; ra = 1 4.0 t j = 25 c 3.0 t j = t j maximum 2.0 maximum required dc ga te current to trigger i gt t j = - 40 c anode supply = 12 v, resistive load; ra = 1 350 ma t j = 25 c 200 t j = t j maximum 100 maximum gate voltage th at will not trigger v gd t j = t j maximum, rated v drm applied 0.25 v maximum gate current that willnot trigger i gd t j = t j maximum, rated v drm applied 10.0 ma maximum rate of rise of turned-on current di/dt t j = t j maximum, i tm = 400 a, rated v drm applied 500 a/s
vs-vsk.230..pbf series www.vishay.com vishay semiconductors revision: 17-jul-14 3 document number: 93053 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc fig. 1 - current ratings ch aracteristics fig. 2 - current ratings characteristics thermal and mechanical specifications parameter symbol test conditions values units junction operating temperature range t j -40 to 130 c storage temperature range t stg -40 to 150 maximum thermal resistance, junction to case per junction r thjc dc operation 0.125 k/w typical thermal resistance, case to heatsink per module r thcs mounting surface flat, smooth and greased 0.02 mounting torque 10 % map to heatsink a mounting comp ound is recommended and the torque should be rechecked after a period of about 3 h to allow for the spread of the compound. 4 to 6 nm busbar to map approximate weight 500 g 17.8 oz. case style magn-a-pak r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 vsk.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 k/w average on-state current (a) maximum allowa b le case temperature (c) 200 240 160 120 90 100 110 120 130 80 60 70 80 40 0 ? conduction angle 30 60 90 120 v s k.230.. s erie s r thjc (dc) = 0.125 k/w 180 average on-state current (a) maximum allowa b le case temperature (c) 250 300 350 400 200 150 90 100 110 120 130 100 60 70 80 50 0 v s k.230.. s erie s r thjc (dc) = 0.125 k/w conduction period ? 30 dc 60 90 120 180
vs-vsk.230..pbf series www.vishay.com vishay semiconductors revision: 17-jul-14 4 document number: 93053 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current fig. 7 - on-state powe r loss characteristics maximum average on- s tate power loss (w) average on-state current (a) 250 200 150 150 200 250 300 350 100 0 50 100 50 0 ? conduction angle v s k.230.. s erie s per junction t j = 130 c 180 120 90 60 30 rm s limit maximum average on- s tate power loss (w) average on- s tate current (a) 250 200 150 400 350 300 150 200 250 300 350 100 0 50 100 50 0 v s k.230.. s erie s per junction t j = 130 c 180 120 90 60 30 rm s limit conduction period ? dc peak half s ine wave on- s tate current (a) num b er of equal amplitu d e half cycle current pulses (n) 7000 6500 6000 5500 5000 4500 4000 3500 3000 1 10 100 v s k.230.. s erie s per junction at any rated load condition and with rated v rrm applied following s urge initial t j = 130 c at 60 hz 0.0083 s at 50 hz 0.0100 s pulse train duration (s) peak half s ine wave on- s tate current (a) 7000 7500 6500 6000 5500 5000 4500 4000 3500 3000 0.01 0.1 1 v s k.230.. s erie s per junction maximum non repetitive s urge current v s . pul s e drain duration.control of conduction may not be maintained. no voltage reapplied rated v rrm applied initial t j = 130 c total rm s output current (a) maximum total on- s tate power loss (w) maximum allowa b le am b ient temperature (c) 700 600 500 400 300 200 100 200 300 400 500 20 40 60 80 100 120 100 0 0 v s k.230.. s erie s per module t j = 130 c 180 120 90 60 30 0.03 k/w 0.06 k/w 0.12 k/w 0.16 k/w 0.2 k/w 0.1 k/w 0.08 k/w 0.25 k/w r th s a = 0.01 k/w - r 0.3 k/w conduction angle ? ?
vs-vsk.230..pbf series www.vishay.com vishay semiconductors revision: 17-jul-14 5 document number: 93053 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - on-state powe r loss characteristics fig. 9 - on-state powe r loss characteristics fig. 10 - on-state voltage drop characteristics fig. 11 - reverse recovery charge characteristics maximum total power loss (w) total output current (a) maximum allowa b le am b ient temperature (c) 20 40 60 80 100 120 1050 900 750 1500 1350 1200 600 450 300 150 0 250 300 350 400 450 200 150 100 50 0 2 x v s k.230.. s erie s s ingle pha s e bridge connected t j = 130 c + - 180 ( s ine) 180 (rect.) 0.03 k/w 0.06 k/w 0.08 k/w 0.1 k/w 0.16 k/w 0.2 k/w r th s a = 0.01 k/w - r 1.5 k/w maximum total power loss (w) total output current (a) maximum allowa b le am b ient temperature (c) 20 40 60 80 100 120 1400 1200 1000 2000 1800 1600 800 600 400 200 0 300 500 400 600 200 100 0 + - 3 x v s k.230.. s erie s three pha s e bridge connected t j = 130 c 120 (rect.) 0.01 k/w 0.02 k/w 0.04 k/w 0.05 k/w 0.06 k/w 0.03 k/w r th s a = 0.005 k/w - r 0.25 k/w 0.16 k/w 0.12 k/w 0.08 k/w 0.1 k/w instantaneous on- s tate current (a) instantaneous on- s tate voltage (v) v s k.230.. s erie s per junction t j = 25 c t j = 130 c 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 10 000 1000 100 q rr - typical reverse recovery charge (c) 200 400 600 800 1000 1200 1400 1600 1800 0 10 20 30 40 50 60 70 80 90 100 v s k.230.. s erie s per junction t j = 130 c d i/ d t - rate of fall of on- s tate current (a/s) i tm = 800 a 500 a 300 a 200 a 100 a 50 a
vs-vsk.230..pbf series www.vishay.com vishay semiconductors revision: 17-jul-14 6 document number: 93053 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - gate characteristics fig. 13 - thermal impedance z thjc characteristics ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 0.1 1 10 100 0.001 0.01 0.1 1 10 100 v g d i g d (b) (a) tj=25 c tj=125 c tj=-40 c (2) (3) instantaneous g ate current (a) instantaneous g ate voltage (v) a) recommended load line for b) recommended load line for rated di f /dt : 20 v, 10 ; t r < = 1 s t r < = 1 s rectangular gate pul s e < = 30% rated di/dt : 10 v, 20 (1) p g m = 10 w, tp = 4 m s (2) p g m = 20 w, tp = 2 m s (3) p g m = 40 w, tp = 1 m s (4) p g m = 60 w, tp = 0.66 m s v s k.230 s erie s fre q uency limited by p g (av) (1) (4) z thjc - transient thermal impe d ance (k/w) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 s quare wave pulse duration (s) s teady s tate value: r = 0.125 k/w (dc operation) thjc v s k.230.. s erie s device code kt vs-vs 230 - 20 pbf 1 4 3 2 5 - circuit configuration (see dimensions - link at the end of datasheet) 2 - current rating 3 - voltage code x 100 = v rrm (see voltage ratings table) 4 - ? none = standard production ? pbf = lead (pb)-free 5 - vishay semiconductors product 1
vs-vsk.230..pbf series www.vishay.com vishay semiconductors revision: 17-jul-14 7 document number: 93053 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 circuit configuration circuit description circuit configuration code circuit drawing two scrs doubler circuit kt available 800 v: contact factor y for different requirements scr/diode doubler circui t, positive control kh available 800 v: contact factor y for different requirements scr/diode doubler circui t, negative control kl available 800 v: contact factor y for different requirements two scrs common cathodes kk available 800 v: contact factor y for different requirements two scrs common anodes kv available 800 v: contact factor y for different requirements links to related documents dimensions www.vishay.com/doc?95086 vskt... + - ~ ~ + - k1g1 g2k2 vskh... + - ~ ~ + - k1g1 vskl... + - ~ ~ + - - - + + - - g2 k2 vskk... vskv... + + - - + + k1 g1 g2 k2
document number: 95086 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 03-aug-07 1 magn-a-pak outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensions are nominal ? full engineering drawings are available on request ? ul identification number for ga te and cathode wire: ul 1385 ? ul identification number for package: ul 94 v-0 ? 5.5 6 (0.24) 38 (1.5) 50 (1.97) 6 (0.24) 115 (4.53) 80 (3.15) 9 (0.35) 20 (0.79) 3 screws m8 x 1.25 35 (1.38) 28 (1.12) 32 (1.26) hex 13 10 (0.39) 92 (3.62) 51 (2.01) 52 (2.04)
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mouser electronics authorized distributor click to view pricing, inventory, delivery & lifecycle information: vishay: ? vskt230-16? vskt230-18? vskt230-12? vskl230-20d32? vskh230-20? vskh230-16d25? vskt230-20? vskh230- 12? vskh230-08? vskt230-08? vskh230-16n? vskh230-20d32? vskh230-16? vskl230-12? vskl230-16? vskl230- 16d25? vs-vskh230-14pbf? vs-vskh230-08pbf? vs-vskh230-20pbf? vs-vskv230-08pbf? vs-vskk230-12pbf ? vskh230-04? vskh230-12pbf? vskh230-14? vskh230-16pbf? vskh230-20pbf? vskt230-04? vskt230-08pbf? vskt230-12pbf? vskt230-14? vskt230-14pbf? vskt230-16pbf? vskt230-20pbf? vs-vskl230-12pbf? vs- vskt230-04pbf? vs-vskt230-14pbf? vs-vskt230-08pbf? vs-vskt230-12pbf? vs-vskh230-12pbf? vs- vskl230-16pbf? vs-vskh230-16pbf? vs-vskh230-04pbf? vs-vskk230-20pbf? vs-vskt230-18pbf? vs- vskt230-20pbf? VS-VSKT230-16pbf
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